 |  | | |
| PartNumber | 2N5551G | 2N5551G-A-AB3-R | 2N5551G-B |
| Description | Bipolar Transistors - BJT 600mA 180V NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N5551 | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.007972 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor |
2N5551G | Bipolar Transistors - BJT 600mA 180V NPN | |
| 2N5551G | TRANS NPN 160V 0.6A TO-92 | ||
| 2N5551G-A-AB3-R | Nuovo e originale | ||
| 2N5551G-B | Nuovo e originale | ||
| 2N5551G-B SOT-89 | Nuovo e originale | ||
| 2N5551G-B-AB3-R | Nuovo e originale | ||
| 2N5551G-B-T92-B | Nuovo e originale | ||
| 2N5551G-C-AB3-R | Nuovo e originale | ||
| 2N5551GCT92TB | Nuovo e originale |