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| PartNumber | 2N2907Ae4 | 2N2907Ae3 | 2N2907Ae3/TR |
| Description | Bipolar Transistors - BJT BJTs | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Packaging | Bulk | Bulk | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-206AA-3 | TO-206AA-3 |
| Transistor Polarity | - | PNP | PNP |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 60 V | 60 V |
| Collector Base Voltage VCBO | - | 60 V | 60 V |
| Emitter Base Voltage VEBO | - | 5 V | 5 V |
| Collector Emitter Saturation Voltage | - | 0.4 V | 0.4 V |
| Maximum DC Collector Current | - | 600 mA | 600 mA |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Maximum Operating Temperature | - | + 200 C | + 200 C |
| DC Current Gain hFE Max | - | 450 at 1 mA, 10 V | 450 at 1 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | 50 at 500 mA, 10 V | 50 at 500 mA, 10 V |
| Pd Power Dissipation | - | 0.5 W | 0.5 W |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N2907Ae4 | Bipolar Transistors - BJT BJTs | |
| 2N2907Ae3 | Bipolar Transistors - BJT | ||
| 2N2907Ae3/TR | Bipolar Transistors - BJT | ||
| 2N2907Ae4/TR | Bipolar Transistors - BJT | ||
| 2N2907AE4 | DIE TRANS PNP MED PWR GEN PURP T | ||
| 2N2907Ae3 | Bipolar Transistors - BJT | ||
| 2N2907Ae4/TR | Bipolar Transistors - BJT | ||
| 2N2907Ae3/TR | Bipolar Transistors - BJT |