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| PartNumber | VQ1006P | VQ1006P-1 | VQ1006P-2 |
| Description | MOSFET 4N-CH 90V 0.4A 14DIP | MOSFET 4N-CH 90V 0.4A 14DIP | |
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | - | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.042329 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | PDIP-14 | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | * | - | - |
| Number of Channels | 4 Channel | - | - |
| Supplier Device Package | * | - | - |
| Configuration | Quad | - | - |
| FET Type | 4 N-Channel | - | - |
| Power Max | 2W | - | - |
| Transistor Type | 4 N-Channel | - | - |
| Drain to Source Voltage Vdss | 90V | - | - |
| Input Capacitance Ciss Vds | 60pF @ 25V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 400mA | - | - |
| Rds On Max Id Vgs | 4.5 Ohm @ 1A, 10V | - | - |
| Vgs th Max Id | 2.5V @ 1mA | - | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 400 mA | - | - |
| Vds Drain Source Breakdown Voltage | 90 V | - | - |
| Rds On Drain Source Resistance | 4 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Channel Mode | Enhancement | - | - |