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| PartNumber | VP2206N3-G | VP2206N3-G P005 | VP2206N3-G P002 |
| Description | MOSFET 60V 0.9Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
| Manufacturer | Microchip | Microchip | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 640 mA | 640 mA | - |
| Rds On Drain Source Resistance | 900 mOhms | 1.5 Ohms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Bulk | Reel | - |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | Microchip Technology | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 1000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.016000 oz | 0.016000 oz | - |