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VN1206L-G vs VN1206L-G P005 vs VN1206L-G P003

 
PartNumberVN1206L-GVN1206L-G P005VN1206L-G P003
DescriptionMOSFET 120V 6OhmMOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V120 V-
Id Continuous Drain Current230 mA230 mA-
Rds On Drain Source Resistance6 Ohms10 Ohms-
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFET--
Width4.19 mm--
BrandMicrochip TechnologyMicrochip Technology-
Fall Time12 ns-12 ns
Product TypeMOSFETMOSFET-
Rise Time8 ns-8 ns
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns-18 ns
Typical Turn On Delay Time8 ns-8 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Package Case--TO-92-3
Pd Power Dissipation--1 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--230 mA
Vds Drain Source Breakdown Voltage--120 V
Rds On Drain Source Resistance--10 Ohms
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