VN0606L-G vs VN0606L-G P002 vs VN0606L-G P005

 
PartNumberVN0606L-GVN0606L-G P002VN0606L-G P005
DescriptionMOSFET 60V 3OhmMOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current330 mA330 mA-
Rds On Drain Source Resistance3 Ohms3 Ohms-
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFET--
Width4.19 mm--
BrandMicrochip TechnologyMicrochip Technology-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Package Case--TO-92-3
Id Continuous Drain Current--330 mA
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--3 Ohms
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