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| PartNumber | TTC004B,Q | TTC004BQ-ND | TTC004B,Q(S |
| Description | Bipolar Transistors - BJT NPN 2.5A 1.5W 280 HFE 0.5V Trans | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-126N-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 1.5 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TTC004B | - | - |
| DC Current Gain hFE Max | 280 | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 1.5 A | - | - |
| DC Collector/Base Gain hfe Min | 140 | - | - |
| Pd Power Dissipation | 10 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 3 oz | - | - |