 | |  | |
| PartNumber | TSM4N90CI C0G | TSM4N90CZ C0 | TSM4N90CICOG |
| Description | MOSFET 900V 4A N Channel Power Mosfet | MOSFET 900V 4A N Channel Mosfet | Power Field-Effect Transisto |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ITO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 900 V | 900 V | - |
| Id Continuous Drain Current | 4 A | 4 A | - |
| Rds On Drain Source Resistance | 3.2 Ohms | 3.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 25 nC | 25 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 38.7 W | 123 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Forward Transconductance Min | 6 S | 6 S | - |
| Fall Time | 50 ns | 50 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 38 ns | 38 ns | - |
| Factory Pack Quantity | 2000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 146 ns | 146 ns | - |
| Typical Turn On Delay Time | 49 ns | 49 ns | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |