TK8R2A06PL,S4X vs TK8R2A06PL vs TK8R2A06PLS4X-ND

 
PartNumberTK8R2A06PL,S4XTK8R2A06PLTK8R2A06PLS4X-ND
DescriptionMOSFET N-Ch 60V 1990pF 29nC 50A 34W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.1 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge28.3 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation36 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time19 ns--
Unit Weight0.068784 oz--
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