TK14E65W,S1X vs TK14E65W vs TK14E65WS1XS

 
PartNumberTK14E65W,S1XTK14E65WTK14E65WS1XS
DescriptionMOSFET MOSFET NChannel 0.22ohm DTMOS
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current13.7 A--
Rds On Drain Source Resistance220 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation130 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameDTMOSIV--
Height15.1 mm--
Length10.16 mm--
SeriesTK14E65W--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
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