SUM70040E-GE3 vs SUM70030E-GE3 vs SUM70040E

 
PartNumberSUM70040E-GE3SUM70030E-GE3SUM70040E
DescriptionMOSFET 100V Vds 20V Vgs D2PAK (TO-263)MOSFET 100V Vds; 20V Vgs TO-263
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current120 A150 A-
Rds On Drain Source Resistance3.2 mOhms2.88 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge120 nC214 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET--
PackagingReelReel-
Height4.83 mm--
Length10.67 mm--
SeriesSUM--
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min82 S110 S-
Fall Time15 ns15 ns-
Product TypeMOSFETMOSFET-
Rise Time22 ns13 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns50 ns-
Typical Turn On Delay Time15 ns30 ns-
Unit Weight0.068654 oz--
Top