SUD23N06-31-GE3 vs SUD23N06-31 vs SUD23N06-31-E3

 
PartNumberSUD23N06-31-GE3SUD23N06-31SUD23N06-31-E3
DescriptionMOSFET N-Ch MOSFET 60V 31 mohm @ 10V
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current21.4 A--
Rds On Drain Source Resistance31 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation31.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesSUD--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min20 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.050717 oz--
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