STY100NM60N vs STY1004 vs STY100NM60N 100NM60N

 
PartNumberSTY100NM60NSTY1004STY100NM60N 100NM60N
DescriptionMOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseMax247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current74 A--
Rds On Drain Source Resistance29 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Pd Power Dissipation625 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingTube--
SeriesSTY100NM60N--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Unit Weight1.340411 oz--
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