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STW20N95K5 vs STW20N95DK5 vs STW20N95K

 
PartNumberSTW20N95K5STW20N95DK5STW20N95K
DescriptionMOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5MOSFET N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh DK5 Power MOSFET in TO-247 package
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage950 V950 V-
Id Continuous Drain Current17.5 A18 A-
Rds On Drain Source Resistance330 mOhms275 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge40 nC50.7 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
TradenameMDmeshMDmesh-
PackagingTube-Tube
SeriesSTW20N95K5STW20N95DK5MDmesh K5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.011640 oz0.211644 oz0.011640 oz
Vgs th Gate Source Threshold Voltage-3 V-
Channel Mode-Enhancement-
Fall Time-25.4 ns-
Rise Time-23 ns-
Typical Turn Off Delay Time-74 ns-
Typical Turn On Delay Time-23 ns-
Package Case--TO-220-3
Pd Power Dissipation--250 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--17.5 A
Vds Drain Source Breakdown Voltage--950 V
Rds On Drain Source Resistance--330 mOhms
Qg Gate Charge--40 nC
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