STU5N62K3 vs STU5N60M2 vs STU5N52K3

 
PartNumberSTU5N62K3STU5N60M2STU5N52K3
DescriptionMOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage620 V650 V525 V
Id Continuous Drain Current4.2 A3.7 A4.4 A
Rds On Drain Source Resistance1.6 Ohms1.4 Ohms1.5 Ohms
Vgs Gate Source Voltage30 V25 V30 V
Qg Gate Charge26 nC4.5 nC17 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation70 W45 W70 W
ConfigurationSingleSingleSingle
TradenameMDmeshMDmeshMDmesh
PackagingTubeTubeTube
SeriesSTU5N62K3STU5N60M2STU5N52K3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-3 V-
Channel Mode--Enhancement
Fall Time--16 ns
Rise Time--11 ns
Typical Turn Off Delay Time--29 ns
Typical Turn On Delay Time--9 ns
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