STU10N60M2 vs STU10N25 vs STU10NA50

 
PartNumberSTU10N60M2STU10N25STU10NA50
DescriptionMOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance560 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge13.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation85 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingTube--
SeriesSTU10N60M2--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time13.2 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32.5 ns--
Typical Turn On Delay Time8.8 ns--
Unit Weight0.139332 oz--
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