STP180N10F3 vs STP180N4F6 vs STP1806

 
PartNumberSTP180N10F3STP180N4F6STP1806
DescriptionMOSFET N-Ch 100V 3.9 mOhm 180A STripFETMOSFET N-CHANNEL 40V 120A TO220
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge114.6 nC--
Pd Power Dissipation315 W--
ConfigurationSingle--
TradenameSTripFET--
PackagingTube--
SeriesSTP180N10F3--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time6.9 ns--
Product TypeMOSFET--
Rise Time97.1 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.011640 oz--
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