STP11NM60 vs STP11NM60 P11NM60 vs STP11NM60(E)

 
PartNumberSTP11NM60STP11NM60 P11NM60STP11NM60(E)
DescriptionMOSFET N-Ch 600 Volt 11 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHST--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation160 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
Height9.15 mm--
Length10.4 mm--
SeriesSTP11NM60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min5.2 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.079014 oz--
Top