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| PartNumber | STGW40H120DF2 | STGW40H120F2 | STGW40H120DF |
| Description | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.1 V | 2.1 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 80 A | 80 A | - |
| Pd Power Dissipation | 468 W | 468 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGW40H120DF2 | STGW40H120F2 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 40 A | 80 A | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Gate Emitter Leakage Current | 250 nA | 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |