STGD6NC60H-1 vs STGD6NC60H vs STGD6NC60HD

 
PartNumberSTGD6NC60H-1STGD6NC60HSTGD6NC60HD
DescriptionIGBT Transistors N-channel 600 V, 7 A very fast IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseIPAK-3--
Mounting StyleThrough HoleThrough HoleSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V1.9 V1.9 V
Maximum Gate Emitter Voltage20 V+/- 20 V+/- 20 V
Continuous Collector Current at 25 C15 A15 A-
Pd Power Dissipation62.5 W--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSTGD6NC60H-1PowerMESHPowerMESH
PackagingTubeTubeDigi-ReelR Alternate Packaging
BrandSTMicroelectronics--
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity3000--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight0.139332 oz0.139332 oz0.012346 oz
Package Case-TO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63
Input Type-StandardStandard
Mounting Type-Through HoleSurface Mount
Supplier Device Package-IPAK (TO-251)D-Pak
Power Max-62.5W56W
Reverse Recovery Time trr--21ns
Current Collector Ic Max-15A15A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm-21A21A
Vce on Max Vge Ic-2.5V @ 15V, 3A2.5V @ 15V, 3A
Switching Energy-20μJ (on), 68μJ (off)20μJ (on), 68μJ (off)
Gate Charge-13.6nC13.6nC
Td on off 25°C-12ns/76ns12ns/76ns
Test Condition-390V, 3A, 10 Ohm, 15V390V, 3A, 10 Ohm, 15V
Pd Power Dissipation-62.5 W50 W
Collector Emitter Voltage VCEO Max-600 V600 V
Continuous Collector Current Ic Max--15 A
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