STGB19NC60HDT4 vs STGB19NC60HD vs STGB19NC60KD

 
PartNumberSTGB19NC60HDT4STGB19NC60HDSTGB19NC60KD
DescriptionIGBT Transistors N Ch 600V 19A600V 40A 130W D�Pak
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT-SMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V-+/- 20 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGB19NC60HDT4-PowerMESH
PackagingReel-Digi-ReelR Alternate Packaging
Continuous Collector Current Ic Max40 A-35 A
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz-0.079014 oz
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--125W
Reverse Recovery Time trr--31ns
Current Collector Ic Max--35A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--75A
Vce on Max Vge Ic--2.75V @ 15V, 12A
Switching Energy--165μJ (on), 255μJ (off)
Gate Charge--55nC
Td on off 25°C--30ns/105ns
Test Condition--480V, 12A, 10 Ohm, 15V
Collector Emitter Voltage VCEO Max--600 V
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