STF21NM60N vs STF21NM60N F21NM60N vs STF21NM60N STF26NM60N

 
PartNumberSTF21NM60NSTF21NM60N F21NM60NSTF21NM60N STF26NM60N
DescriptionMOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance180 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation30 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.3 mm--
Length10.4 mm--
SeriesSTF21NM60N--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min12 S--
Fall Time31 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time84 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.011640 oz--
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