STD4NK100Z vs STD4NK100B vs STD4NK50

 
PartNumberSTD4NK100ZSTD4NK100BSTD4NK50
DescriptionMOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperMESH Power MOSFET in a DPAK package
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current2.2 A--
Rds On Drain Source Resistance6.8 Ohms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameSuperMESH--
PackagingReel--
Height2.4 mm--
Length10.1 mm--
ProductPower MOSFET--
SeriesSTD4NK100Z--
Transistor Type1 N-Channel--
TypeSuperMESH--
Width6.6 mm--
BrandSTMicroelectronics--
Fall Time39 ns--
Product TypeMOSFET--
Rise Time7.5 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn On Delay Time15 ns--
Unit Weight0.139332 oz--
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