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| PartNumber | STB6N60M2 | STB6N52K3 | STB6N60 |
| Description | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | IGBT Transistors MOSFET N-Ch 525V 1 Ohm 5A SuperMESH3 Zene | |
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 1.06 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | Single |
| Tradename | MDmesh | - | - |
| Packaging | Reel | - | Reel |
| Series | STB6N60M2 | - | MDmesh M2 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Fall Time | 22.5 ns | - | 22.5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns | - | 7.4 nS |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | - | 24 ns |
| Typical Turn On Delay Time | 9.5 ns | - | 9.5 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 60 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 1.06 Ohms |
| Qg Gate Charge | - | - | 8 nC |