SQJ940EP-T1_GE3 vs SQJ942EP-T1_GE3 vs SQJ941EP-T1-GE3

 
PartNumberSQJ940EP-T1_GE3SQJ942EP-T1_GE3SQJ941EP-T1-GE3
DescriptionMOSFET 40V 15A AEC-Q101 QualifiedMOSFET 40V 15A AEC-Q101 QualifiedMOSFET 2P-CH 30V 8A PPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current15 A, 18 A15 A, 45 A-
Rds On Drain Source Resistance13.3 mOhms, 5.3 mOhms18 mOhms, 9 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20 nC, 48 nC19.7 nC, 33.8 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation48 W, 43 W17 W, 48 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type2 N-Channel2 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min64 S, 102 S46 S, 73 S-
Fall Time4.9 ns, 13.5 ns12 ns, 16 ns-
Product TypeMOSFETMOSFET-
Rise Time9.3 ns, 9.5 ns25 ns, 31 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.6 ns, 47 ns29 ns, 52 ns-
Typical Turn On Delay Time4.8 ns, 7.7 ns33 ns, 40 ns-
Unit Weight0.017870 oz0.017870 oz-
Height-1.04 mm-
Length-6.15 mm-
Width-5.13 mm-
Top