SQJ481EP-T1_GE3 vs SQJ486EP-T1_GE3 vs SQJ481EP

 
PartNumberSQJ481EP-T1_GE3SQJ486EP-T1_GE3SQJ481EP
DescriptionMOSFET -80V Vds; +/-20V Vgs PowerPAK SO-8LMOSFET N-Channel 75V AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V75 V-
Id Continuous Drain Current16 A30 A-
Rds On Drain Source Resistance80 mOhms22 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge50 nC34 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation45 W56 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min20 S75 S-
Fall Time6 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns21 ns-
Typical Turn On Delay Time12 ns9 ns-
Qualification-AEC-Q101-
Tradename-TrenchFET-
Series-SQ-
Transistor Type-1 N-Channel-
Unit Weight-0.017870 oz-
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