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| PartNumber | SPD04N50C3ATMA1 | SPD04N50C3 | SPD04N50C3 STK830D |
| Description | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 500V 4.5A DPAK-2 CoolMOS C3 | |
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS C3 | CoolMOS C3 | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001117762 SPD04N50C3 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | SP000313945 SPD04N50C3BTMA1 SPD04N50C3XT | - |
| Package Case | - | TO-252-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 50 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 5 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Rds On Drain Source Resistance | - | 950 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 70 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Qg Gate Charge | - | 22 nC | - |
| Forward Transconductance Min | - | 4.4 S | - |
| Channel Mode | - | Enhancement | - |