SMBT3904PNH6327XTSA1 vs SMBT 3904PN H6327 vs SMBT3904PN

 
PartNumberSMBT3904PNH6327XTSA1SMBT 3904PN H6327SMBT3904PN
DescriptionBipolar Transistors - BJT AF TRANSISTORBipolar Transistors - BJT AF TRANSISTOR
ManufacturerInfineonInfineon TechnologiesINF
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RFTransistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN PNP-
ConfigurationSingleDual-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V0.4 V-
Gain Bandwidth Product fT300 MHz250 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSMBT3904SMBT3904-
Height0.9 mm--
Length2 mm--
PackagingReelReel-
Width1.25 mm--
BrandInfineon Technologies--
Continuous Collector Current200 mA--
Pd Power Dissipation330 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases3904PN H6327 SMBT SMBT394PNH6327XT SP000749584--
Unit Weight0.000282 oz0.000265 oz-
Part Aliases-SMBT3904PNH6327XT SMBT3904PNH6327XTSA1 SP000749584-
Package Case-SOT-363-6-
Technology-Si-
Pd Power Dissipation-250 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-40 V-
Emitter Base Voltage VEBO-6 V-
Maximum DC Collector Current-200 mA-
DC Collector Base Gain hfe Min-100 at 10 mA at 1 V-
DC Current Gain hFE Max-300 at 10 mA at 1 V-
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