SIZF916DT-T1-GE3 vs SIZF918DT-T1-GE3 vs SIZF914DT-T1-GE3

 
PartNumberSIZF916DT-T1-GE3SIZF918DT-T1-GE3SIZF914DT-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5FMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5FMOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAIR-6x5F-8PowerPAIR-6x5F-8PowerPAIR-6x5F-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-Channel, NPNN-Channel, NPNN-Channel, NPN
Vds Drain Source Breakdown Voltage30 V30 V25 V
Id Continuous Drain Current40 A, 60 A40 A, 60 A40 A, 60 A
Rds On Drain Source Resistance12.7 mOhms, 6.58 mOhms6.8 mOhms, 2.7 mOhms6.2 mOhms, 1.5 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1.1 V, 1 V1.1 V
Vgs Gate Source Voltage4.5 V4.5 V4.5 V
Qg Gate Charge14.6 nC, 62 nC14.6 nC, 37 nC14 nC, 65 nC
Minimum Operating Temperature- 55 C- 50 C- 50 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation26.6 W, 60 W26.6 W, 50 W26.6 W, 60 W
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFET, SkyFET, PowerPAIRTrenchFET, SkyFET, PowerPAIR
PackagingReelReelReel
SeriesSIZSIZSIZ
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min53 S, 91 S53 S, 87 S45 S, 105 S
Fall Time10 ns, 20 ns10 ns, 10 ns10 ns, 15 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time45 ns, 60 ns45 ns, 55 ns50 ns, 60 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns, 45 ns20 ns, 30 ns15 ns, 45 ns
Typical Turn On Delay Time17 ns, 30 ns17 ns, 22 ns20 ns, 32 ns
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