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| PartNumber | SIHW70N60EF-GE3 | SIHW73N60E-GE3 | SIHW70N60EF |
| Description | MOSFET RECOMMENDED ALT 78-SIHG70N60EF-GE3 | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247AD-3 | - |
| Packaging | Reel | Tube | - |
| Height | 20.82 mm | 20.82 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Series | EF | E | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 480 | 480 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.229281 oz | 1.340411 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Id Continuous Drain Current | - | 73 A | - |
| Rds On Drain Source Resistance | - | 39 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 241 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 520 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 120 ns | - |
| Rise Time | - | 105 ns | - |
| Typical Turn Off Delay Time | - | 290 ns | - |
| Typical Turn On Delay Time | - | 63 ns | - |