 | |  | |
| PartNumber | SIHP22N60AEL-GE3 | SIHP22N60AE-GE3 | SIHP22N60E |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220AB-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 21 A | 20 A | - |
| Rds On Drain Source Resistance | 180 mOhms | 156 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
| Vgs Gate Source Voltage | 10 V | 30 V | - |
| Qg Gate Charge | 41 nC | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 208 W | 179 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Series | EL | SIH | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 16 S | - | - |
| Fall Time | 28 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 33 ns | - |
| Factory Pack Quantity | 1 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 86 ns | 45 ns | - |
| Typical Turn On Delay Time | 27 ns | 19 ns | - |
| Packaging | - | Tube | - |
| Height | - | 15.49 mm | - |
| Length | - | 10.41 mm | - |
| Width | - | 4.7 mm | - |
| Unit Weight | - | 0.063493 oz | - |