 | |  | |
| PartNumber | SIHP125N60EF-GE3 | SIHP120N60E-GE3 | SIHP1260EGE3 |
| Description | MOSFET EF Series Power MOSFET With Fast Body Diode | MOSFET 650V Vds; 30V Vgs TO-220AB | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220AB-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 25 A | 25 A | - |
| Rds On Drain Source Resistance | 109 mOhms | 120 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 31 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | - | - |
| Series | EF | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 20 ns | 33 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 33 ns | 65 ns | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 31 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Pd Power Dissipation | - | 179 W | - |
| Configuration | - | Single | - |
| Packaging | - | Tube | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 6 S | - |
| Factory Pack Quantity | - | 50 | - |