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| PartNumber | SIHP100N60E-GE3 | SIHP050N60E-GE3 | SIHP065N60E-GE3 |
| Description | MOSFET 650V Vds; 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 30 A | 51 A | 40 A |
| Rds On Drain Source Resistance | 100 mOhms | 50 mOhms | 57 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 50 nC | 130 nC | 98 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 278 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | - |
| Series | E | E | E |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 11 S | 12 S | - |
| Fall Time | 20 ns | 48 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | 82 ns | 46 ns |
| Factory Pack Quantity | 50 | - | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 67 ns | 54 ns |
| Typical Turn On Delay Time | 21 ns | 35 ns | 28 ns |
| Unit Weight | - | - | 0.063493 oz |