SIHG73N60AEL-GE3 vs SIHG73N60AE-GE3 vs SIHG73N60E

 
PartNumberSIHG73N60AEL-GE3SIHG73N60AE-GE3SIHG73N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current69 A60 A-
Rds On Drain Source Resistance42 mOhms35 mOhms-
Vgs th Gate Source Threshold Voltage2 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge342 nC394 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation520 W417 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesELE-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min28 S22 S-
Fall Time104 ns114 ns-
Product TypeMOSFETMOSFET-
Rise Time80 ns96 ns-
Factory Pack Quantity1--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time244 ns212 ns-
Typical Turn On Delay Time51 ns43 ns-
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