SIHF065N60E-GE3 vs SIHF10N40D-E3 vs SIHF10N40D

 
PartNumberSIHF065N60E-GE3SIHF10N40D-E3SIHF10N40D
DescriptionMOSFET 650V Vds; 30V Vgs TO-220MOSFET 400V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V400 V-
Id Continuous Drain Current40 A10 A-
Rds On Drain Source Resistance65 mOhms600 mOhms-
Vgs th Gate Source Threshold Voltage3 V5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge74 nC15 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation39 W33 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesED-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min12 S--
Fall Time13 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time46 ns18 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time54 ns18 ns-
Typical Turn On Delay Time28 ns12 ns-
Height-15.9 mm-
Length-10.5 mm-
Width-4.69 mm-
Unit Weight-0.211644 oz-
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