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| PartNumber | SIHB20N50E-GE3 | SIHB21N60EF-GE3 | SIHB21N65EF-GE3 |
| Description | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | TO-263-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 550 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 184 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 46 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 179 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | Reel | Tube |
| Height | 4.83 mm | - | 4.83 mm |
| Length | 10.67 mm | - | 10.67 mm |
| Series | E | EF | EF |
| Width | 9.65 mm | - | 9.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.079014 oz |