 |  |  | |
| PartNumber | SIHB120N60E-GE3 | SIHB12N50C-E3 | SIHB12N50C |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 500V | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 560 V | - |
| Id Continuous Drain Current | 25 A | 12 A | - |
| Rds On Drain Source Resistance | 120 mOhms | 555 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 45 nC | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 179 W | 208 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Bulk | - |
| Series | E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 33 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 65 ns | 35 ns | - |
| Factory Pack Quantity | 50 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns | 23 ns | - |
| Typical Turn On Delay Time | 19 ns | 18 ns | - |
| Unit Weight | - | 0.050717 oz | - |