SI7972DP-T1-GE3 vs SI7970DP-E3 vs SI7970DP-T1-E3

 
PartNumberSI7972DP-T1-GE3SI7970DP-E3SI7970DP-T1-E3
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8MOSFET 40V 10.2A 3.5W 19mohm @ 10V
ManufacturerVishay-VISHAY
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance18 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation22 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
SeriesSI7--
Transistor Type2 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min38 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.017870 oz--
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