 |  | | |
| PartNumber | SI7615ADN-T1-GE3 | SI7615ADN-T1-GE3-CUT TAPE | SI7615 |
| Description | MOSFET -20V Vds 12V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 4.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 122 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 52 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | SI7 | - | TrenchFETR |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 82 S | - | - |
| Fall Time | 13 ns, 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns, 40 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns, 85 ns | - | - |
| Typical Turn On Delay Time | 13 ns, 41 ns | - | - |
| Part # Aliases | SI7621DN-T1-GE3 | - | - |
| Unit Weight | 0.005997 oz | - | - |
| Part Aliases | - | - | SI7621DN-T1-GE3 |
| Package Case | - | - | PowerPAKR 1212-8 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR 1212-8 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 52W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 5590pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 35A (Tc) |
| Rds On Max Id Vgs | - | - | 4.4 mOhm @ 20A, 10V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 183nC @ 10V |
| Pd Power Dissipation | - | - | 52 W |
| Id Continuous Drain Current | - | - | - 35 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 4.4 mOhms |
| Qg Gate Charge | - | - | 59 nC |