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| PartNumber | SI7212DN-T1-E3 | SI7212DN-T1-GE3 | SI7212DN |
| Description | MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | SI7 | SI7 | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI7212DN-E3 | SI7212DN-GE3 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 6.8 A | - |
| Rds On Drain Source Resistance | - | 36 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 11 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.6 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 N-Channel | - |
| Forward Transconductance Min | - | 20 S | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |