SI4936ADY-T1-E3 vs SI4936ADY-T1 vs SI4936ADY-T1-E

 
PartNumberSI4936ADY-T1-E3SI4936ADY-T1SI4936ADY-T1-E
DescriptionMOSFET 30V 5.9A 2WMOSFET 30V 5.9A 2W
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5.9 A--
Rds On Drain Source Resistance36 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min15 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesSI4936ADY-E3--
Unit Weight0.017870 oz--
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