SI4056DY-T1-GE3 vs SI4056DY vs SI4056DY-T1-E3

 
PartNumberSI4056DY-T1-GE3SI4056DYSI4056DY-T1-E3
DescriptionMOSFET RECOMMENDED ALT 78-SI4058DY-T1-GE3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current11.1 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min26 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSI4056DY-GE3--
Unit Weight0.017870 oz--
Top