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| PartNumber | SI3493BDV-T1 | SI3493BDV-T1-E3 | SI3493BDV-T1-E3-CUT TAPE |
| Description | MOSFET P-CH 20V 8A 6-TSOP | ||
| Manufacturer | - | VISHAY | - |
| Product Category | - | FETs - Single | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SI3493BDV-E3 | - |
| Unit Weight | - | 0.000705 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | 6-TSOP | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 2.97W | - |
| Transistor Type | - | 1 P-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 1805pF @ 10V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 8A (Tc) | - |
| Rds On Max Id Vgs | - | 27.5 mOhm @ 7A, 4.5V | - |
| Vgs th Max Id | - | 900mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 43.5nC @ 5V | - |
| Pd Power Dissipation | - | 2.08 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 84 ns | - |
| Rise Time | - | 72 ns | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 7 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 27.5 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 75 ns | - |
| Typical Turn On Delay Time | - | 22 ns | - |
| Channel Mode | - | Enhancement | - |