SI3473DDV-T1-GE3 vs SI3473DV-T1-E3 vs SI3473DV

 
PartNumberSI3473DDV-T1-GE3SI3473DV-T1-E3SI3473DV
DescriptionMOSFET -12V Vds 8V Vgs TSOP-6MOSFET RECOMMENDED ALT 781-SI3473CDV-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance38.8 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.6 W--
ConfigurationSingle--
PackagingReelReel-
SeriesSi3473DDVSI3-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min30 S--
Fall Time35 ns--
Product TypeMOSFETMOSFET-
Rise Time28 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time22 ns--
Tradename-TrenchFET-
Height-1.1 mm-
Length-3.05 mm-
Width-1.65 mm-
Part # Aliases-SI3473DV-E3-
Unit Weight-0.000705 oz-
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