RSD100N10TL vs RSD100N10 vs RSD100N10FRA

 
PartNumberRSD100N10TLRSD100N10RSD100N10FRA
DescriptionMOSFET PWR MOSFET 4V
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance133 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation20 W--
ConfigurationSingle--
PackagingReel--
SeriesRSD100N10--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesRSD100N10--
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