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| PartNumber | RN1109(T5L,F,T) | RN1109(T5LFT)CT-ND | RN1109 |
| Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| Manufacturer | Toshiba | - | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 47 kOhms | - | - |
| Typical Resistor Ratio | 2.14 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-416-3 | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Series | RN1109 | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 15 V | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |