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| PartNumber | RM6N800IP | RM6N800HD-T | RM6N800HD |
| Description | MOSFET TO-251 MOSFET | MOSFET D2-PAK MOSFET | |
| Manufacturer | Rectron | Rectron | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-251-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 900 mOhms | 900 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 24 nC | 22.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 98 W | 98 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Rectron | Rectron | - |
| Forward Transconductance Min | 6 S | 6 S | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 53 ns | 53 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |