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| PartNumber | RM4N650LD-T | RM4N650IP | RM4N650LD |
| Description | MOSFET D-PAK MOSFET | MOSFET TO-251 MOSFET | |
| Manufacturer | Rectron | Rectron | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 4 A | 4 A | - |
| Rds On Drain Source Resistance | 1.2 Ohms | 1.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 10 nC | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 46 W | 46 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Rectron | Rectron | - |
| Forward Transconductance Min | 4 S | 4 S | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 2500 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | 48 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |