RGW80TS65GC11 vs RGW80TS65DGC11 vs RGW80TS65C11

 
PartNumberRGW80TS65GC11RGW80TS65DGC11RGW80TS65C11
DescriptionIGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBTIGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBTIGBT, SINGLE, 650V, 78A, TO-247N
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247N-3TO-247N-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.5 V1.5 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C78 A78 A-
Pd Power Dissipation214 W214 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Continuous Collector Current Ic Max78 A78 A-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
SubcategoryIGBTsIGBTs-
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