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| PartNumber | RGTH00TS65GC11 | RGTH00TS65DGC11 | RGTH00TS65 |
| Description | IGBT Transistors 650V 50A IGBT Stop Trench | IGBT Transistors 650V 50A IGBT Stop Trench | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Continuous Collector Current at 25 C | 85 A | 85 A | - |
| Pd Power Dissipation | 277 W | 277 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | RGTH00TS65 | RGTH00TS65 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 85 A | 85 A | - |
| Operating Temperature Range | - 40 C to + 175 C | - 40 C to + 175 C | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Continuous Collector Current | 50 A | 50 A | - |
| Gate Emitter Leakage Current | +/- 200 nA | +/- 200 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | RGTH00TS65 | RGTH00TS65D | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |